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PolarHV TM
Power MOSFET
IXTQ 26N50P
IXTT 26N50P
IXTV 26N50P
IXTV 26N50PS
V DSS
I D25
R DS(on)
=
=
≤
500
26
230
V
A
m ?
N-Channel Enhancement Mode
Avalanche Rated
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
500
500
V
V
G
D
S
D (TAB)
V GSS
V GSM
Continuos
Transient
± 30
± 40
V
V
TO-268 (IXTT)
I D25
I DM
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
26
78
A
A
G
S
D (TAB)
I AR
T C = 25 ° C
26
A
E AR
E AS
T C = 25 ° C
T C = 25 ° C
40
1.0
mJ
J
PLUS220 (IXTV)
dv/dt
P D
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 4 ?
T C = 25 ° C
10
400
V/ns
W
G
D
S
D (TAB)
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
PLUS220SMD (IXTV_S)
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
° C
° C
M d
Mounting torque
(TO-3P)
1.13/10 Nm/lb.in.
G
S
D (TAB)
Weight
TO-3P
TO-268
PLUS220 & PLUS220SMD
6
5.5
5
g
g
g
G = Gate
S = Source
D = Drain
TAB = Drain
Symbol Test Conditions
Characteristic Values
Features
(T J = 25 ° C, unless otherwise specified)
BV DSS V GS = 0 V, I D = 250 μ A
Min. Typ. Max.
500
V
l
l
International standard packages
Unclamped Inductive Switching (UIS)
V GS(th)
I GSS
V DS = V GS , I D = 250 μ A
V GS = ± 30 V DC , V DS = 0
3.0
5.5
± 100
V
nA
l
rated
Low package inductance
- easy to drive and to protect
I DSS
V DS = V DSS
V GS = 0 V
T J = 125 ° C
25
250
μ A
μ A
Advantages
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
230
m ?
l
l
Easy to mount
Space savings
? 2006 IXYS All rights reserved
l
High power density
DS99206E(12/05)
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相关代理商/技术参数
IXTT26N60P 功能描述:MOSFET 26.0 Amps 600 V 0.27 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT28N50Q 功能描述:MOSFET 24 Amps 500V 0.23 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT2N170D2 制造商:IXYS Corporation 功能描述:MOSFET N CH 1700V 2A TO-268
IXTT30N50L 功能描述:MOSFET 30 Amps 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT30N50L2 功能描述:MOSFET LINEAR L2 SERIES MOSFET 500V 30A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT30N50P 功能描述:MOSFET 30.0 Amps 500 V 0.2 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT30N60L2 功能描述:MOSFET 30 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT30N60P 功能描述:MOSFET 30.0 Amps 600 V 0.24 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube